- 您现在的位置：买卖IC网 > Sheet目录337 > LH28F320S3HNS-ZM (Sharp Microelectronics)IC FLASH 32MBIT 110NS 56SSOP
LHF32KZM
8
3 BUS OPERATION
The local CPU reads and writes flash memory in-
system. All bus cycles to or from the flash memory
conform to standard microprocessor bus cycles.
3.1 Read
Information can be read from any block, identifier
codes, query structure, or status register independent
of the V PP voltage. RP# must be at V IH .
The first task is to write the appropriate read mode
command (Read Array, Read Identifier Codes, Query
or Read Status Register) to the CUI. Upon initial
device power-up or after exit from deep power-down
mode, the device automatically resets to read array
mode. Five control pins dictate the data flow in and
out of the component: CE# (CE 0 #, CE 1 #), OE#, WE#,
RP# and WP#. CE 0 #, CE 1 # and OE# must be driven
active to obtain data at the outputs. CE 0 #, CE 1 # is
the device selection control, and when active enables
the selected memory device. OE# is the data output
(DQ 0 -DQ 15 ) control and when active drives the
selected memory data onto the I/O bus. WE# and
RP# must be at V IH . Figure 17, 18 illustrates a read
cycle.
3.2 Output Disable
With OE# at a logic-high level (V IH ), the device
outputs are disabled. Output pins DQ 0 -DQ 15 are
placed in a high-impedance state.
3.3 Standby
Either CE 0 # or CE 1 # at a logic-high level (V IH ) places
the device in standby mode which substantially
reduces device power consumption. DQ 0 -DQ 15
outputs are placed in a high-impedance state
block lock-bit configuration, the device continues
functioning, and consuming active power until the
operation completes.
3.4 Deep Power-Down
RP# at V IL initiates the deep power-down mode.
In read modes, RP#-low deselects the memory,
places output drivers in a high-impedance state and
turns off all internal circuits. RP# must be held low for
a minimum of 100 ns. Time t PHQV is required after
return from power-down until initial memory access
outputs are valid. After this wake-up interval, normal
operation is restored. The CUI is reset to read array
mode and status register is set to 80H.
During block erase, full chip erase, (multi) word/byte
write or block lock-bit configuration modes, RP#-low
will abort the operation. STS remains low until the
reset operation is complete. Memory contents being
altered are no longer valid; the data may be partially
erased or written. Time t PHWL is required after RP#
goes to logic-high (V IH ) before another command can
be written.
As with any automated device, it is important to
assert RP# during system reset. When the system
comes out of reset, it expects to read from the flash
memory. Automated flash memories provide status
information when accessed during block erase, full
chip erase, (multi) word/byte write and block lock-bit
configuration. If a CPU reset occurs with no flash
memory reset, proper CPU initialization may not
occur because the flash memory may be providing
status information instead of array data. SHARP’s
flash memories allow proper CPU initialization
following a system reset through the use of the RP#
input. In this application, RP# is controlled by the
same RESET# signal that resets the system CPU.
independent of OE#. If deselected during block
erase, full chip erase, (multi) word/byte write and
Rev. 1.6
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
LH28F320SKTD-ZR
IC FLASH 32MBIT 70NS 48TSOP
LHF00L28
IC FLASH 16MBIT 70NS 48TSOP
LPM409 CHASSIS
STNRD 4SLOT CHASSIS W/INPUT LEAD
LS15RB1201J04
POE SPLITTER 10.8W 12V @0.9A
LT1932ES6#TRMPBF
IC LED DRIVR WHITE BCKLGT TSOT-6
LT1937ES5#TRMPBF
IC LED DRIVR WHITE BCKLGT TSOT-5
LT3003EMSE#TRPBF
IC LED DRIVER BALLASTER 10-MSOP
LT3465AES6#TRMPBF
IC LED DRIVR WHITE BCKLGT TSOT-6
相关代理商/技术参数
LH28F320S3-L11
制造商:SHARP 制造商全称:Sharp Electrionic Components 功能描述:32-MBIT(4MBx8/2MBx16)Smart 3 Flash MEMORY
LH28F320S3-L110
制造商:SHARP 制造商全称:Sharp Electrionic Components 功能描述:32-MBIT(4MBx8/2MBx16)Smart 3 Flash MEMORY
LH28F320S3-L130
制造商:SHARP 制造商全称:Sharp Electrionic Components 功能描述:32-MBIT(4MBx8/2MBx16)Smart 3 Flash MEMORY
LH28F320S3-L14
制造商:SHARP 制造商全称:Sharp Electrionic Components 功能描述:32-MBIT(4MBx8/2MBx16)Smart 3 Flash MEMORY
LH28F320S3-L140
制造商:SHARP 制造商全称:Sharp Electrionic Components 功能描述:32-MBIT(4MBx8/2MBx16)Smart 3 Flash MEMORY
LH28F320S3-L160
制造商:SHARP 制造商全称:Sharp Electrionic Components 功能描述:32-MBIT(4MBx8/2MBx16)Smart 3 Flash MEMORY
LH28F320S3NS
制造商:SHARP 制造商全称:Sharp Electrionic Components 功能描述:Smart voltage 32Mbit Flash Memory
LH28F320S3NS-L11
功能描述:IC FLASH 32MBIT 110NS 56SSOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:60 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:16K (2K x 8) 速度:2MHz 接口:SPI 3 线串行 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-PDIP 包装:管件 产品目录页面:1449 (CN2011-ZH PDF)